NSV40200UW6T1G Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A, 2V Power - Max 875mW Frequency - Transition 140MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-WDFN Exposed Pad Supplier Device Package 6-WDFN (2x2) |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1A, 2V Power - Max 875mW Frequency - Transition 140MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-WDFN Exposed Pad Supplier Device Package 6-WDFN (2x2) |
