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NSM21356DW6T1G Datasheet

NSM21356DW6T1G Datasheet
Total Pages: 4
Size: 71.6 KB
ON Semiconductor
This datasheet covers 1 part numbers: NSM21356DW6T1G
NSM21356DW6T1G Datasheet Page 1
NSM21356DW6T1G Datasheet Page 2
NSM21356DW6T1G Datasheet Page 3
NSM21356DW6T1G Datasheet Page 4
NSM21356DW6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V, 65V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V / 220 @ 2mA, 5V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

230mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363