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NRVHPD660T4G Datasheet

NRVHPD660T4G Datasheet
Total Pages: 5
Size: 67.41 KB
ON Semiconductor
This datasheet covers 2 part numbers: NRVHPD660T4G, NHPD660T4G
NRVHPD660T4G Datasheet Page 1
NRVHPD660T4G Datasheet Page 2
NRVHPD660T4G Datasheet Page 3
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NRVHPD660T4G Datasheet Page 5
NRVHPD660T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

3V @ 6A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

50ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Operating Temperature - Junction

-65°C ~ 175°C

NHPD660T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

6A

Voltage - Forward (Vf) (Max) @ If

3V @ 6A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

Operating Temperature - Junction

-65°C ~ 175°C