NRVBM110LT1G Datasheet
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Manufacturer ON Semiconductor Series POWERMITE® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 10V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 415mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 10V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 125°C |
Manufacturer ON Semiconductor Series POWERMITE® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 10V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 415mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 10V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 125°C |
Manufacturer ON Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 10V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 365mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 10V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 125°C |
Manufacturer ON Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 10V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 365mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 10V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 125°C |
