NP80N055MHE-S18-AY Datasheet
NP80N055MHE-S18-AY Datasheet
Total Pages: 12
Size: 292.54 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
NP80N055MHE-S18-AY
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 120W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
