NP110N03PUG-E1-AY Datasheet
NP110N03PUG-E1-AY Datasheet
Total Pages: 9
Size: 259.62 KB
Renesas Electronics America
This datasheet covers 1 part numbers:
NP110N03PUG-E1-AY
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 24600pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 288W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
