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NLAS3699BMN1R2G Datasheet

NLAS3699BMN1R2G Datasheet
Total Pages: 10
Size: 97.26 KB
ON Semiconductor
This datasheet covers 1 part numbers: NLAS3699BMN1R2G
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NLAS3699BMN1R2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Switch Circuit

DPDT

Multiplexer/Demultiplexer Circuit

2:2

Number of Circuits

2

On-State Resistance (Max)

550mOhm

Channel-to-Channel Matching (ΔRon)

50mOhm

Voltage - Supply, Single (V+)

1.65V ~ 4.5V

Voltage - Supply, Dual (V±)

-

Switch Time (Ton, Toff) (Max)

50ns, 50ns

-3db Bandwidth

20MHz

Charge Injection

50pC

Channel Capacitance (CS(off), CD(off))

7pF

Current - Leakage (IS(off)) (Max)

500nA

Crosstalk

-62dB @ 100kHz

Operating Temperature

-40°C ~ 85°C (TA)

Package / Case

16-VFQFN Exposed Pad

Supplier Device Package

16-QFN (3x3)