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NJVNJD2873T4G Datasheet

NJVNJD2873T4G Datasheet
Total Pages: 5
Size: 66.56 KB
ON Semiconductor
This datasheet covers 3 part numbers: NJVNJD2873T4G, NJVNJD2873T4G-VF01, NJD2873T4G
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NJVNJD2873T4G Datasheet Page 5
NJVNJD2873T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 500mA, 2V

Power - Max

1.68W

Frequency - Transition

65MHz

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

NJVNJD2873T4G-VF01

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 500mA, 2V

Power - Max

1.68W

Frequency - Transition

65MHz

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

NJD2873T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

300mV @ 50mA, 1A

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 500mA, 2V

Power - Max

1.68W

Frequency - Transition

65MHz

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK