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NGTB35N60FL2WG Datasheet

NGTB35N60FL2WG Datasheet
Total Pages: 8
Size: 93.66 KB
ON Semiconductor
This datasheet covers 1 part numbers: NGTB35N60FL2WG
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NGTB35N60FL2WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 35A

Power - Max

300W

Switching Energy

840µJ (on), 280µJ (off)

Input Type

Standard

Gate Charge

125nC

Td (on/off) @ 25°C

72ns/132ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

68ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247