NGTB35N60FL2WG Datasheet
NGTB35N60FL2WG Datasheet
Total Pages: 8
Size: 93.66 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NGTB35N60FL2WG
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A Power - Max 300W Switching Energy 840µJ (on), 280µJ (off) Input Type Standard Gate Charge 125nC Td (on/off) @ 25°C 72ns/132ns Test Condition 400V, 35A, 10Ohm, 15V Reverse Recovery Time (trr) 68ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |