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NGTB30N120IHLWG Datasheet

NGTB30N120IHLWG Datasheet
Total Pages: 8
Size: 156.87 KB
ON Semiconductor
This datasheet covers 1 part numbers: NGTB30N120IHLWG
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NGTB30N120IHLWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

320A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

260W

Switching Energy

1mJ (off)

Input Type

Standard

Gate Charge

420nC

Td (on/off) @ 25°C

-/360ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247