NDBA180N10BT4H Datasheet
NDBA180N10BT4H Datasheet
Total Pages: 6
Size: 696.45 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NDBA180N10BT4H
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V, 15V Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 15V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6950pF @ 50V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
