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NBRB8H100T4G Datasheet

NBRB8H100T4G Datasheet
Total Pages: 6
Size: 96.98 KB
ON Semiconductor
This datasheet covers 2 part numbers: NBRB8H100T4G, MBRB8H100T4G
NBRB8H100T4G Datasheet Page 1
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NBRB8H100T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

710mV @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

4.5µA @ 100V

Capacitance @ Vr, F

600pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Operating Temperature - Junction

-65°C ~ 175°C

MBRB8H100T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SWITCHMODE™

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

710mV @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

4.5µA @ 100V

Capacitance @ Vr, F

600pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Operating Temperature - Junction

-65°C ~ 175°C