MUR2560R Datasheet
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 1.7V @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 90ns Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 1.7V @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 90ns Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 1.3V @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 25A Voltage - Forward (Vf) (Max) @ If 1.3V @ 25A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |