MUR20060CTR Datasheet
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 110ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 110ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 90ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 90ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
