MTD10N10ELT4 Datasheet
MTD10N10ELT4 Datasheet
Total Pages: 7
Size: 78.87 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
MTD10N10ELT4
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 220mOhm @ 5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 25V FET Feature - Power Dissipation (Max) 1.75W (Ta), 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
