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MPS751ZL1 Datasheet

MPS751ZL1 Datasheet
Total Pages: 8
Size: 78.99 KB
ON Semiconductor
MPS751ZL1 Datasheet Page 1
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MPS751ZL1 Datasheet Page 8
MPS751ZL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

2A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

500mV @ 200mA, 2A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

75 @ 1A, 2V

Power - Max

625mW

Frequency - Transition

75MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPS6652RLRPG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPS6652RLRA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPS6651

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

MPS6602RLRAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPS6601RLRA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

MPS6602G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

MPS6601G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

MPS6602

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

MPS6601

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

600mV @ 100mA, 1A

Current - Collector Cutoff (Max)

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 500mA, 1V

Power - Max

625mW

Frequency - Transition

100MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3