MPS5179RLRPG Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 200W DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature - Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 200W DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature - Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature - Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 2GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V Current - Collector (Ic) (Max) 50mA Operating Temperature - Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |