MPF4393RLRPG Datasheet
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V (VGS) Resistance - RDS(On) 100 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V (VGS) Resistance - RDS(On) 100 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V (VGS) Resistance - RDS(On) 100 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 10nA Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 10nA Input Capacitance (Ciss) (Max) @ Vds 10pF @ 15V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
