MMIX1F180N25T Datasheet
MMIX1F180N25T Datasheet
Total Pages: 7
Size: 224.59 KB
IXYS
This datasheet covers 1 part numbers:
MMIX1F180N25T
|
Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 132A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13mOhm @ 90A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 364nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23800pF @ 25V FET Feature - Power Dissipation (Max) 570W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 24-SMPD Package / Case 24-PowerSMD, 21 Leads |
