MMBFJ175 Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 7mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 125 Ohms Power - Max 225mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 7mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 125 Ohms Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 250 Ohms Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 300 Ohms Power - Max 225mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 250 Ohms Power - Max 225mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |