MJW3281A Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A Current - Collector Cutoff (Max) 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A, 5V Power - Max 200W Frequency - Transition 30MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A Current - Collector Cutoff (Max) 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A, 5V Power - Max 200W Frequency - Transition 30MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A Current - Collector Cutoff (Max) 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A, 5V Power - Max 200W Frequency - Transition 30MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A Current - Collector Cutoff (Max) 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A, 5V Power - Max 200W Frequency - Transition 30MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
