MJE2955T Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V Power - Max 75W Frequency - Transition 2MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V Power - Max 75W Frequency - Transition 2MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V Power - Max 75W Frequency - Transition 2MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A, 4V Power - Max 75W Frequency - Transition 2MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
