MJE271G Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA, 10V Power - Max 1.5W Frequency - Transition 6MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA |
Manufacturer ON Semiconductor Series - Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA, 10V Power - Max 1.5W Frequency - Transition 6MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA, 10V Power - Max 1.5W Frequency - Transition 6MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA, 10V Power - Max 1.5W Frequency - Transition 6MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA |
