MJE243G Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V Power - Max 1.5W Frequency - Transition 40MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V Power - Max 1.5W Frequency - Transition 40MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-225AA |