MJD50TF Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 400V Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A Current - Collector Cutoff (Max) 200µA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V Power - Max 1.56W Frequency - Transition 10MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A Current - Collector Cutoff (Max) 200µA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V Power - Max 1.56W Frequency - Transition 10MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252-3 |
