MJD112T4 Datasheet










Manufacturer STMicroelectronics Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Current - Collector Cutoff (Max) 20µA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V Power - Max 20W Frequency - Transition 25MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |
Manufacturer STMicroelectronics Series - Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A Current - Collector Cutoff (Max) 20µA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V Power - Max 20W Frequency - Transition 25MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |