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MJ14001G Datasheet

MJ14001G Datasheet
Total Pages: 5
Size: 90.62 KB
ON Semiconductor
This datasheet covers 2 part numbers: MJ14001G, MJ14002G
MJ14001G Datasheet Page 1
MJ14001G Datasheet Page 2
MJ14001G Datasheet Page 3
MJ14001G Datasheet Page 4
MJ14001G Datasheet Page 5
MJ14001G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

60A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

3V @ 12A, 60A

Current - Collector Cutoff (Max)

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 50A, 3V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3

MJ14002G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

60A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

3V @ 12A, 60A

Current - Collector Cutoff (Max)

1mA

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 50A, 3V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-65°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3