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MCH5839-TL-W Datasheet

MCH5839-TL-W Datasheet
Total Pages: 6
Size: 832.36 KB
ON Semiconductor
This datasheet covers 2 part numbers: MCH5839-TL-W, MCH5839-TL-H
MCH5839-TL-W Datasheet Page 1
MCH5839-TL-W Datasheet Page 2
MCH5839-TL-W Datasheet Page 3
MCH5839-TL-W Datasheet Page 4
MCH5839-TL-W Datasheet Page 5
MCH5839-TL-W Datasheet Page 6
MCH5839-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

266mOhm @ 750mA, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 10V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88AFL/MCPH5

Package / Case

5-SMD, Flat Leads

MCH5839-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

266mOhm @ 750mA, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-MCPH

Package / Case

6-SMD (5 Leads), Flat Lead