MBRH200200R Datasheet
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Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 200A Voltage - Forward (Vf) (Max) @ If 920mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 200A Voltage - Forward (Vf) (Max) @ If 920mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 200A Voltage - Forward (Vf) (Max) @ If 920mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 200A Voltage - Forward (Vf) (Max) @ If 880mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 150V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction -55°C ~ 150°C |
