MBRH12035R Datasheet
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Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type - Package / Case D-67 Supplier Device Package - Operating Temperature - Junction - |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 700mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 HALF-PAK Supplier Device Package D-67 Operating Temperature - Junction -55°C ~ 150°C |
