MBR10200CTC0 Datasheet
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 980mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 200V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 980mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 150V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 950mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 100V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
