LSIC1MO170E1000 Datasheet
LSIC1MO170E1000 Datasheet
Total Pages: 8
Size: 1,016.72 KB
Littelfuse
Website: http://www.littelfuse.com/
This datasheet covers 1 part numbers:
LSIC1MO170E1000
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Manufacturer Littelfuse Inc. Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 20V Rds On (Max) @ Id, Vgs 1Ohm @ 2A, 20V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15nC @ 20V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 1000V FET Feature - Power Dissipation (Max) 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3L Package / Case TO-247-3 |
