KSD526O Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 5V Power - Max 30W Frequency - Transition 8MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 5V Power - Max 30W Frequency - Transition 8MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V Power - Max 30W Frequency - Transition 8MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A Current - Collector Cutoff (Max) 30µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 5V Power - Max 30W Frequency - Transition 8MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
