KSD5018PWD Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 275V Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 3A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max 40W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 275V Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 3A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max 40W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 275V Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 3A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max 40W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
