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KSD363OTU Datasheet

KSD363OTU Datasheet
Total Pages: 6
Size: 179.59 KB
ON Semiconductor
This datasheet covers 6 part numbers: KSD363OTU, KSD363R, KSD363O, KSD363Y, KSD363YTU, KSD363RTU
KSD363OTU Datasheet Page 1
KSD363OTU Datasheet Page 2
KSD363OTU Datasheet Page 3
KSD363OTU Datasheet Page 4
KSD363OTU Datasheet Page 5
KSD363OTU Datasheet Page 6
KSD363OTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 1A, 5V

Power - Max

40W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

KSD363R

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 1A, 5V

Power - Max

40W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

KSD363O

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 1A, 5V

Power - Max

40W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

KSD363Y

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1A, 5V

Power - Max

40W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

KSD363YTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1A, 5V

Power - Max

40W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

KSD363RTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 100mA, 1A

Current - Collector Cutoff (Max)

1mA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 1A, 5V

Power - Max

40W

Frequency - Transition

10MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3