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KSC900CYTA Datasheet

KSC900CYTA Datasheet
Total Pages: 4
Size: 40.43 KB
ON Semiconductor
This datasheet covers 5 part numbers: KSC900CYTA, KSC900CGTA, KSC900GTA, KSC900LTA, KSC900LBU
KSC900CYTA Datasheet Page 1
KSC900CYTA Datasheet Page 2
KSC900CYTA Datasheet Page 3
KSC900CYTA Datasheet Page 4
KSC900CYTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

200mV @ 2mA, 20mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 500µA, 3V

Power - Max

250mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

KSC900CGTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

200mV @ 2mA, 20mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 500µA, 3V

Power - Max

250mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

KSC900GTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

200mV @ 2mA, 20mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

200 @ 500µA, 3V

Power - Max

250mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

KSC900LTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

200mV @ 2mA, 20mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

350 @ 500µA, 3V

Power - Max

250mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

KSC900LBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

50mA

Voltage - Collector Emitter Breakdown (Max)

25V

Vce Saturation (Max) @ Ib, Ic

200mV @ 2mA, 20mA

Current - Collector Cutoff (Max)

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

350 @ 500µA, 3V

Power - Max

250mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3