KSC3552RTU Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 12A Voltage - Collector Emitter Breakdown (Max) 800V Vce Saturation (Max) @ Ib, Ic 2V @ 1.2A, 6A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 800mA, 5V Power - Max 150W Frequency - Transition 15MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 12A Voltage - Collector Emitter Breakdown (Max) 800V Vce Saturation (Max) @ Ib, Ic 2V @ 1.2A, 6A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 800mA, 5V Power - Max 150W Frequency - Transition 15MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 12A Voltage - Collector Emitter Breakdown (Max) 800V Vce Saturation (Max) @ Ib, Ic 2V @ 1.2A, 6A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 800mA, 5V Power - Max 150W Frequency - Transition 15MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
