KSC1674COTA Datasheet
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
