KSC1393YTA Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 30V Frequency - Transition 700MHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 200MHz Gain 20dB ~ 24dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA, 10V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |