KSA1013RTA Datasheet
![KSA1013RTA Datasheet Page 1](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0001.webp)
![KSA1013RTA Datasheet Page 2](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0002.webp)
![KSA1013RTA Datasheet Page 3](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0003.webp)
![KSA1013RTA Datasheet Page 4](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0004.webp)
![KSA1013RTA Datasheet Page 5](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0005.webp)
![KSA1013RTA Datasheet Page 6](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0006.webp)
![KSA1013RTA Datasheet Page 7](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0007.webp)
![KSA1013RTA Datasheet Page 8](http://pneda.ltd/static/datasheets/images/117/ksa1013rta-0008.webp)
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 200mA, 5V Power - Max 900mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 200mA, 5V Power - Max 900mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 200mA, 5V Power - Max 900mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 200mA, 5V Power - Max 900mW Frequency - Transition 50MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-92-3 |