J176 Datasheet
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Manufacturer NXP USA Inc. Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V (VGS) Resistance - RDS(On) 250 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92 |
Manufacturer NXP USA Inc. Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 5V @ 10nA Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V (VGS) Resistance - RDS(On) 85 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92 |
Manufacturer NXP USA Inc. Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 7mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V (VGS) Resistance - RDS(On) 125 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92 |
Manufacturer NXP USA Inc. Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) 30V Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V (VGS) Resistance - RDS(On) 300 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92 |
