J112RLRAG Datasheet
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 30 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 30 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 30 Ohms Power - Max 350mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 50 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 35V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds - Resistance - RDS(On) 30 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |