J112 Datasheet
|
Manufacturer NXP USA Inc. Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) 40V Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V (VGS) Resistance - RDS(On) 50 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) 40V Current - Drain (Idss) @ Vds (Vgs=0) 2mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V (VGS) Resistance - RDS(On) 100 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 40V Drain to Source Voltage (Vdss) 40V Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 10V @ 1µA Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V (VGS) Resistance - RDS(On) 30 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
