J110 Datasheet
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Manufacturer NXP USA Inc. Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) 25V Current - Drain (Idss) @ Vds (Vgs=0) 10mA @ 5V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 4V @ 1µA Input Capacitance (Ciss) (Max) @ Vds 30pF @ 0V Resistance - RDS(On) 18 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) 25V Current - Drain (Idss) @ Vds (Vgs=0) 80mA @ 5V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 10V @ 1µA Input Capacitance (Ciss) (Max) @ Vds 30pF @ 0V Resistance - RDS(On) 8 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 25V Drain to Source Voltage (Vdss) 25V Current - Drain (Idss) @ Vds (Vgs=0) 80mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 1µA Input Capacitance (Ciss) (Max) @ Vds 30pF @ 10V (VGS) Resistance - RDS(On) 12 Ohms Power - Max 400mW Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
