IXUC200N055 Datasheet
IXUC200N055 Datasheet
Total Pages: 2
Size: 468.5 KB
IXYS
This datasheet covers 1 part numbers:
IXUC200N055
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
