IXTX6N200P3HV Datasheet
IXTX6N200P3HV Datasheet
Total Pages: 5
Size: 176.69 KB
IXYS
This datasheet covers 1 part numbers:
IXTX6N200P3HV
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2000V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4Ohm @ 3A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V FET Feature - Power Dissipation (Max) 960W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247PLUS-HV Package / Case TO-247-3 Variant |
