IXTV96N25T Datasheet
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Manufacturer IXYS Series TrenchHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS220 Package / Case TO-220-3, Short Tab |
Manufacturer IXYS Series TrenchHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series TrenchHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
