IXTR140P10T Datasheet
IXTR140P10T Datasheet
Total Pages: 6
Size: 191.12 KB
IXYS
This datasheet covers 1 part numbers:
IXTR140P10T
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Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13mOhm @ 70A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 400nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 31400pF @ 25V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case TO-247-3 |
