IXTP05N100M Datasheet
IXTP05N100M Datasheet
Total Pages: 4
Size: 107.75 KB
IXYS
This datasheet covers 1 part numbers:
IXTP05N100M
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 700mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17Ohm @ 375mA, 10V Vgs(th) (Max) @ Id 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
