IXTN62N50L Datasheet
IXTN62N50L Datasheet
Total Pages: 5
Size: 130.76 KB
IXYS
This datasheet covers 1 part numbers:
IXTN62N50L
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 62A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 20V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 550nC @ 20V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V FET Feature - Power Dissipation (Max) 800W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
